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摘要： The stereoselective conjugate addition of β,β-disubstituted enesulfinamides to α-substituted nitroolefins, followed by transposition of sulfinylamino group, provides an efficient asymmetric synthetic route to 1,4-diketone derivatives. The resulting γ-imino ketone products feature an acyclic quaternary stereocenter bearing two sterically and electronically similar substituents (e.g., methyl and ethyl groups), which are challenging to construct by the conventional synthetic protocols involving C–C bond formation. The synthetic application of the described protocol was demonstrated by the asymmetric formal synthesis of the natural product hamigeran B.

关键词： active split structure   flexible electronics   high-mobility oxide thin-film transistor (TFT)   polycrystalline InGaO (poly-IGO)   polyimide (PI) substrate  

摘要： We report high-performance, polycrystalline indium-gallium-oxide (poly-IGO) thin-film transistors (TFTs) based on an active split structure with 1 mu m unit-width channels. The self-aligned, coplanar TFT fabricated on polyimide (PI) substrate exhibits threshold voltage (VTH) of +0.9 V, saturation mobility (mu SAT) of 108.8 cm2 V-1 s-1, and subthreshold swing of 0.28 V decade-1. After patterning amorphous IGO (a-IGO) layer into 1-mu m-wide parallel units, the crystallization was carried out at 450 degrees C. The resulting poly-IGO film shows well-aligned (222)-dominant crystalline domains along the edge regions. The TFT shows a small hysteresis window (VH) of +0.07 V. Upon detaching the TFTs on PI substrate from the carrier glass, no degradation in TFT performance was observed, confirming the mechanical reliability of the active split TFTs. The TFTs maintain stable electrical performance under compressive bending with bending radius down to 1 mm and endure up to 10,000 in-folding cycles without VTH shift. These results demonstrate that the 1 mu m unit-width active-split poly-IGO TFTs enable high electrical performance and outstanding mechanical reliability, offering strong potential for next-generation flexible oxide TFT electronics.

摘要： We discuss the (1+1)-dimensional wave maps equation with values in a compact Lie group. The corresponding Gibbs measure is given by a Brownian motion on the Lie group, which plays a central role in stochastic geometry. Our main theorem is the almost sure global well-posedness and invariance of the Gibbs measure for the wave maps equation. It is the first result of this kind for any geometric wave equation. Our argument relies on a novel finite-dimensional approximation of the wave maps equation which involves the so-called Killing renormalization. The main part of this article then addresses the global convergence of our approximation and the almost invariance of the Gibbs measure under the corresponding flow. The proof of global convergence requires a carefully crafted Ansatz which includes modulated linear waves, modulated bilinear waves, and mixed modulated objects. The interactions between the different objects in our Ansatz are analyzed using an intricate combination of analytic, geometric, and probabilistic ingredients. In particular, geometric aspects of the wave maps equation are utilized via orthogonality, which has previously been used in the deterministic theory of wave maps at critical regularity. The proof of almost invariance of the Gibbs measure under our approximation relies on conservative structures, which are a new framework for the approximation of Hamiltonian equations, and delicate estimates of the energy increment.